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| SKIM609GAL12E4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 15 V VCES 1200 V VGES tpsc Tj Inverse diode IF Ts = 25 C Ts = 70 C Tj = 150 C Tj = 175 C Ts = 25 C Ts = 70 C 1200 748 608 600 1800 -20 ... 20 10 -40 ... 175 139 110 150 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 450 900 -40 ... 175 Ts = 25 C Ts = 70 C 1397 1107 1350 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 4050 6480 -40 ... 175 700 -40 ... 125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V s C A A A A A C A A A A A C A C V Conditions Values Unit SKiM(R) 93 Trench IGBT Modules SKIM609GAL12E4 Target Data Features * IGBT 4 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology forthermal contacts and electricalcontacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor Tj = 175 C IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 C Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 600 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C f = 1 MHz f = 1 MHz f = 1 MHz 1.85 2.25 0.8 0.7 1.8 2.6 5.8 0.1 35.2 2.32 1.88 3400 1.3 2.10 2.45 0.9 0.8 2.0 2.8 6.5 0.3 V V V V m m V mA mA nF nF nF nC Conditions min. typ. max. Unit VGE=VCE, IC = 24 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C GAL (c) by SEMIKRON Rev. 2 - 26.08.2009 1 SKIM609GAL12E4 Characteristics Symbol td(on) tr Eon td(off) tf Eoff Rth(j-s) Conditions VCC = 600 V IC = 600 A VGE = 15 V RG on = 4.1 RG off = 4.1 di/dton = 5000 A/s di/dtoff = 4400 A/s per IGBT Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 150 A Tj = 150 C di/dtoff = 3300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C IF = 600 A Tj = 150 C di/dtoff = 5300 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C min. typ. 150 121 136 808 100 83 max. Unit ns ns mJ ns ns mJ 0.068 2.1 2.1 1.3 0.9 5.6 7.8 153 15 9 0.501 1.7 1.4 1.3 0.9 0.6 0.9 510 123 39 0.048 10 15 1.9 1.7 1.5 1.1 0.7 0.9 2.5 2.4 1.5 1.1 6.4 8.5 K/W V V V V m m A C mJ K/W V V V V m m A C mJ K/W nH m m SKiM 93 Trench IGBT Modules SKIM609GAL12E4 Target Data Features * IGBT 4 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate * Pressure contact technology forthermal contacts and electricalcontacts * High short circuit capability, self limiting to 6 x IC * Integrated temperature sensor (R) Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-s) Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chip VF0 rF IRRM Qrr Err Rth(j-s) Module LCE RCC'+EE' Ms Mt w Temperatur Sensor R100 B100/125 terminal-chip to heat sink (M4) Typical Applications * Automotive inverter * High reliability AC inverter wind * High reliability AC inverter drives Ts = 25 C Ts = 125 C 2.5 to terminals (M6) 3 0.3 0.5 4 5 1100 Nm Nm Nm g K TSensor = 100 C (R25 = 5 k) R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 339 4096 GAL 2 Rev. 2 - 26.08.2009 (c) by SEMIKRON SKIM609GAL12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 2 - 26.08.2009 3 SKIM609GAL12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 2 - 26.08.2009 (c) by SEMIKRON SKIM609GAL12E4 SKIM(R) 93 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 2 - 26.08.2009 5 |
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